aug. 1999 pin configuration mitsubishi semiconductor m54530p/fp 7-unit 400ma darlington transistor array with clamp diode description m54530p and m54530fp are seven-circuit darlington tran- sistor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 40v) high-current driving (ic(max) = 400ma) with clamping diodes driving available with pmos ic output wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and mos-bipolar logic ic inter- faces function the m54530p and m54530fp each have seven circuits con- sisting of npn darlington transistors. these ics have resis- tance of 20k w between input transistor bases and input pins. a spike-killer clamping diode is provided between each out- put pin (collector) and com pin (pin 9). the output transistor emitters are all connected to the gnd pin (pin 8). the collector current is 400ma maximum. collector-emitter supply voltage is 40v maximum. the m54530fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram v ma v ma v w c c C0.5 ~ +40 400 C0.5 ~ +40 400 40 1.47(p)/1.00(fp) C20 ~ +75 C55 ~ +125 v ceo i c v i i f v r p d t opr t stg 20k 2k 20k com gnd input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the com and gnd. ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature output, h current per circuit output, l ta = 25 c, when mounted on board 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? ? com common gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? 16p4(p) package type 16p2n-a(fp) input output
aug. 1999 mitsubishi semiconductor m54530p/fp 7-unit 400ma darlington transistor array with clamp diode recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) v v v o v il 0 8 5 0 40 0.5 i c v ih 0 0 400 200 35 ma v v v m a i ceo = 100 m a v i = 8v, i c = 400ma v i = 5v, i c = 200ma v i = 17v v i = 35v i f = 400ma v r = 40v v ce = 4v, i c = 300ma, ta = 25 c i i v ce (sat) symbol unit parameter test conditions limits min typ + max 40 1000 1.3 1.0 0.85 2.0 1.5 3500 2.4 1.6 1.8 3.8 2.4 100 v ma + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns 35 760 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit pg 50 w c l measured device open v o r l input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 8v p-p (2) input-output conditions : r l = 25 w , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes ton 50% 50% 50% 50% toff input output limits min typ max unit parameter symbol duty cycle p : no more than 8% fp : no more than 6% duty cycle p : no more thn 30% fp : no more than 25% l input voltage h input voltage collector current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) output voltage i c 400ma i c 200ma collector-emitter breakdown voltage clamping diode forward voltage clamping diode reverse current dc amplification factor v (br) ceo v f i r h fe collector-emitter saturation voltage input current electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time t on t off c l = 15pf (note 1)
aug. 1999 mitsubishi semiconductor m54530p/fp 7-unit 400ma darlington transistor array with clamp diode typical characteristics thermal derating factor characteristics ambient temperature ta (?) m54530fp m54530p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 0 100 200 v i = 5v ta = ?0? ta = 25? ta = 75? 300 400 0.5 1.0 1.5 2.0 collector current ic (ma) duty-cycle-collector characteristics (m54530p) duty cycle (%) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75? duty-cycle-collector characteristics (m54530p) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54530fp) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54530fp) duty cycle (%) 0 0 100 200 300 400 500 a ? ? ? ? 20 40 60 80 100 collector current ic (ma)
aug. 1999 mitsubishi semiconductor m54530p/fp 7-unit 400ma darlington transistor array with clamp diode dc amplification factor collector current characteristics collector current ic (ma) 10 1 10 3 v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 10 4 5 3 2 7 10 3 10 2 23 57 10 2 23 57 dc amplification factor h fe grounded emitter transfer characteristics input voltage v i (v) 0 v ce = 4v ta = 25? ta = 75? ta = ?0? 100 200 300 400 0 1234 collector current ic (ma) input characteristics input voltage v i (v) 0 ta = 25? ta = 75? ta = ?0? 0.5 1.0 1.5 2.0 0 5 10152025 input current i i (ma) clamping diode characteristics forward bias voltage v f (v) 0 0 100 200 ta = ?0? ta = 25? ta = 75? 300 400 0.5 1.0 1.5 2.0 forward bias current i f (ma)
|
